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  • DS1220Y-200+

Product Information

Picture of DS1220Y-200+
Manufacturer part number: DS1220Y-200+
Manufacturer: ANALOG DEVICES
IC, NVRAM CMOS 16K, 1220, DIP24
  Technical Data: PDF PDF

Products specifications

PackagingTube
Memory Size16Kbit
Write Cycle Time - Word, Page200ns
Package / Case24-DIP Module (0.600", 15.24mm)
Mounting TypeThrough Hole
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply4.5V ~ 5.5V
Memory Organization2K x 8
DigiKey ProgrammableNot Verified
Memory FormatNVSRAM
Memory TypeNon-Volatile
Memory InterfaceParallel
Access Time200 ns
Supplier Device Package24-EDIP
Operating temperature0°C ~ 70°C (TA)

Supplier List

Product CodeManufacturer PartManufacturer DescriptionAvailable QtyLead time (days)Sales ConditionPrice (KRW) Order QuantityOrder / Quote
13999262
DS1220Y-200+
MAXIM INTEGRATED PRODUCTS
IC NVSRAM 16KBIT PARALLEL 24EDIP
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-23
1~ ₩0
   
Minimum: 1
Multiple: 1
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Full Description

  • IC, NVRAM CMOS 16K, 1220, DIP24
  • Memory Size:16Kbit
  • Memory Configuration:2K x 8bit
  • NVRAM Features:Internal Battery
  • Supply Voltage Min:4.5V
  • Supply Voltage Max:5.5V
  • Memory Case Style:DIP
  • No. of Pins:24
  • IC Interface Type:-
  • Access Time:200ns
  • Operating Temperature Min:0°C
  • Operating Temperature Max:70°C
  • Packaging:Each
  • Base Number:1220
  • Data Retention Time:10Yr
  • IC Generic Number:1220
  • IC Temperature Range:Commercial
  • Logic Function Number:1220
  • MSL:-
  • Memory Type:NVRAM
  • Memory Voltage Vcc:5V
  • Operating Temperature Range:0°C to +70°C
  • SVHC:1,2-dimethoxyethane, ethylene glycol dimethyl ether (EGDME) (20-Jun-2013)
  • Supply Voltage Range:4.5V to 5.5V
  • Termination Type:Through Hole
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