Name: FDB86102LZ
Availability: InStock

Product Information
	Manufacturer part number: FDB86102LZ Manufacturer: ON SEMICONDUCTOR MOSFET, N CH, 100V, 30A, TO-263 Technical Data:

Products specifications
Minimum Gate Threshold Voltage	1
Maximum Continuous Drain Current	30 A
Transistor Configuration	Single
Typical Gate Charge @ Vgs	15.2 nC @ 10 V
Length	10.67
Maximum Operating Temperature	+150 °C
Channel Type	N
Minimum Operating Temperature	-55 °C
Maximum Power Dissipation	2 W
Series	PowerTrench
Transistor Material	Si
Height	4.83
Number of Elements per Chip	1
Mounting Type	Surface Mount
Width	11.33
Package Type	D2PAK (TO-263)
Channel Mode	Enhancement
Pin Count	3
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Drain Source Resistance	42 mΩ

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Product Code	Manufacturer Part	Manufacturer	Description	Available Qty	Lead time (days)	Sales Condition	Price (KRW)	Order Quantity	Order / Quote
13968893	FDB86102LZ	FAIRCHILD	MOSFET, N CH, 100V, 30A, TO-263	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-20	1~ ₩0	Minimum: 1 Multiple: 1
13971802	FDB86102LZ	Fairchild Semiconductor Corporation		716 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 716 : 1 days	Last Update: 2025-07-20 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
13980614	FDB86102LZ	FAIRCHILD	FDB86102LZ N-Channel MOSFET, 30 A, 100 V PowerTrench, 3-Pin D2PAK ON Semiconductor	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-20	1~ ₩0	Minimum: 1 Multiple: 1
13984591	FDB86102LZ	FARCHILD	FDB86102LZ N-Channel MOSFET, 30 A, 100 V PowerTrench, 3-Pin D2PAK ON Semiconductor	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-20	1~ ₩0	Minimum: 1 Multiple: 1
13988633	FDB86102LZ	ONSEMI	Fet 100V 24.0 Mohm D2Pak/Reel \|Onsemi FDB86102LZ	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-20 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
13996491	FDB86102LZ	ONSEMI	Trans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK	23400 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 23400 : 1 days	Last Update: 2025-07-20 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
13996492	FDB86102LZ	ONSEMI	Power Field-Effect Transistor, 8.3A, 100V, 0.024o	23400 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 23400 : 1 days	Last Update: 2025-07-20 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
14012846	FDB86102LZ	ONSEMI	Trans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK	800 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 800 : 1 days	Last Update: 2025-07-20 Packaging: Pure	800~ ₩1,179 2400~ ₩1,166	Minimum: 1 Multiple: 1
14013485	FDB86102LZ	Fairchild Semiconductor Corporation	POWER FIELD-EFFECT TRANSISTOR, 8	6918 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 6918 : 1 days	Last Update: 2025-07-20 Packaging: Pure	345~ ₩1,340	Minimum: 1 Multiple: 1
14013689	FDB86102LZ	ON SEMICONDUCTOR	ON Semiconductor	23400 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 23400 : 1 days	Last Update: 2025-07-20	166~ ₩1,660 250~ ₩1,290 1000~ ₩1,270 2500~ ₩1,240 5000~ ₩1,230 10000~ ₩1,160 20000~ ₩1,120	Minimum: 1 Multiple: 1

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MOSFET, N CH, 100V, 30A, TO-263 Transistor Polarity:N Channel Continuous Drain Current Id:30A Drain Source Voltage Vds:100V On Resistance Rds(on):0.018ohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs:1.5V Power Dissipation Pd:3.1W Transistor Case Style:TO-263AB No. of Pins:3 Operating Temperature Max:150°C MSL:MSL 1 - Unlimited SVHC:No SVHC (16-Dec-2013) Operating Temperature Min:-55°C Operating Temperature Range:-55°C to +150°C Voltage Vgs th Max:1.5V

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