Leocom KoreanFGA60N65SMD

Product Information
	Manufacturer part number: FGA60N65SMD Manufacturer: ON SEMICONDUCTOR Transistor: IGBT; 650V; 60A; 300W; TO3P Technical Data:

Products specifications
Gate charge	284nC
Manufacturer	onsemi
Collector-emitter voltage	650V
Gate-emitter voltage	±20V
Type of transistor	IGBT
Pulsed collector current	180A
Features of semiconductor devices	integrated anti-parallel diode
Power Dissipation	300W
Mounting	THT
Case	TO3PN
Kind of package	tube
Collector current	60A

Supplier List
Sort by :
Product Code	Manufacturer Part	Manufacturer	Description	Available Qty	Lead time (days)	Sales Condition	Price (KRW)	Order Quantity	Order / Quote
14021608	FGA60N65SMD	ON SEMICONDUCTOR	IGBT, 650V, 120A, TO-3PN	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩8,442 10~ ₩7,240 30~ ₩6,024 270~ ₩5,317 510~ ₩5,023	Minimum: 1 Multiple: 1
14022695	FGA60N65SMD	ONSEMI	Transistor: IGBT; 650V; 60A; 300W; TO3P	112 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 112 : 1 days	Last Update: 2025-07-21	8~ ₩11,100 30~ ₩9,660	Minimum: 1 Multiple: 1
14027320	FGA60N65SMD	ONSEMI	IGBT, 650V, 120A, TO-3PN, DC Collector Current:1	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Pure	1~ ₩1,001,000 10~ ₩904,810 25~ ₩852,200 50~ ₩799,600 100~ ₩750,000 250~ ₩700,400 900~ ₩652,300	Minimum: 1 Multiple: 1
14027321	FGA60N65SMD	ONSEMI	Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+T	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Pure	450~ ₩5,194,370 500~ ₩4,743,470	Minimum: 1 Multiple: 1

Rows per page