Name: IRFU024NPBF
Availability: OutOfStock

Product Information
	Manufacturer part number: IRFU024NPBF Manufacturer: SIMENS MOSFET, N, 55V, 16A, I-PAK Technical Data:

Products specifications
Series	HEXFET
Maximum Power Dissipation	45 W
Channel Type	N
Height	6.22
Typical Gate Charge @ Vgs	20 nC @ 10 V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	IPAK (TO-251)
Maximum Gate Threshold Voltage	4
Minimum Gate Threshold Voltage	2
Transistor Material	Si
Maximum Drain Source Voltage	55 V
Maximum Operating Temperature	+175 °C
Pin Count	3
Maximum Gate Source Voltage	-20 V, +20 V
Mounting Type	Through Hole
Maximum Drain Source Resistance	75 mΩ
Maximum Continuous Drain Current	17 A
Width	2.39
Channel Mode	Enhancement
Transistor Configuration	Single
Length	6.73

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Product Code	Manufacturer Part	Manufacturer	Description	Available Qty	Lead time (days)	Sales Condition	Price (KRW)	Order Quantity	Order / Quote
13969175	IRFU024NPBF	INFINEON	Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13972931	IRFU024NPBF	INTERNATIONAL RECTIFIER	MOSFET, N, 55V, 16A, I-PAK	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13975102	IRFU024NPBF	Infineon Technologies	MOSFET, N, 55V, 16A, I-PAK	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13975103	IRFU024NPBF	Infineon Technologies	MOSFET, N, 55V, 16A, I-PAK	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13978216	IRFU024NPBF	INFINEON	N-CH 55V 17A 75mOhm TO-251AA	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13978217	IRFU024NPBF	INFINEON	N-CH 55V 17A 75mOhm TO-251	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13981638	IRFU024NPBF	Infineon Technologies	Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) IPAK Tube	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13982386	IRFU024NPBF	INFINEON	INFINEON	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13982387	IRFU024NPBF	INFINEON	INFINEON	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13987268	IRFU024NPBF	INFINEON	Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-251	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1

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Full Description
MOSFET, N, 55V, 16A, I-PAK Transistor Polarity:N Channel Continuous Drain Current Id:17A Drain Source Voltage Vds:55V On Resistance Rds(on):75mohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs:4V Power Dissipation Pd:45W Transistor Case Style:TO-251AA No. of Pins:3 Operating Temperature Max:175°C MSL:- SVHC:No SVHC (16-Dec-2013) Alternate Case Style:I-PAK Current Id Max:17A Current Temperature:25°C Fall Time tf:27ns Full Power Rating Temperature:25°C Junction to Case Thermal Resistance A:3.3°C/W Operating Temperature Min:-55°C Operating Temperature Range:-55°C to +175°C Pulse Current Idm:68A Rise Time:34ns SMD Marking:IRFU024N Termination Type:Through Hole Turn Off Time:16ns Turn On Time:4.9ns Voltage Vds:55V Voltage Vds Typ:55V Voltage Vgs Max:4V Voltage Vgs Rds on Measurement:10V

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