Product Information

Picture of NDSH10120C-F155
Manufacturer part number: NDSH10120C-F155
Manufacturer: ON SEMICONDUCTOR
  Technical Data: PDF

Products specifications

Reverse Recovery Time (trr)0 ns
PackagingTube
SpeedNo Recovery Time > 500mA (Io)
Grade-
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Current - Average Rectified (Io)12A
Voltage - DC Reverse (Vr) (Max)1200 V
Package / CaseTO-247-2
Voltage - Forward (Vf) (Max) @ If1.75 V @ 10 A
Mounting TypeThrough Hole
Current - Reverse Leakage @ Vr200 μA @ 1.2 kV
Qualification-
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F680pF @ 1V, 100kHz

Supplier List

Product CodeManufacturer PartManufacturer DescriptionAvailable QtyLead time (days)Sales ConditionPrice (KRW) Order QuantityOrder / Quote
NDSH10120C-F155
ONSEMI
SIC SCHOTTKY DIODE, 1.2KV, 10A, TO-247
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-20
1~ ₩0
   
Minimum: 1
Multiple: 1
NDSH10120C-F155
ONSEMI
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-20
Packaging: Pure
450~ ₩5,539
   
Minimum: 1
Multiple: 1
NDSH10120C-F155
ONSEMI
Sic Diode Gen2.0 1200V To247-2L/Tube |Onsemi NDSH
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-20
Packaging: Pure
250~ ₩6,740
500~ ₩6,270
1000~ ₩5,890
   
Minimum: 1
Multiple: 1
NDSH10120C-F155
ONSEMI
Schottky Diodes & Rectifiers SIC DIODE GEN2.0
425 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
425 : 1 days

Last Update: 2025-07-20
Packaging: Pure
1~ ₩8,923
10~ ₩7,510
100~ ₩6,065
250~ ₩5,732
450~ ₩5,398
900~ ₩4,620
2700~ ₩4,351
   
Minimum: 1
Multiple: 1