Product Information

Picture of SQ2364EES-T1_GE3
Manufacturer part number: SQ2364EES-T1_GE3
Manufacturer: SIMENS
AEC-Q N-CHANNEL 60 V (D-S)175C MOSFET
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Products specifications

Package / CaseTO-236-3, SC-59, SOT-23-3
FET TypeN-Channel
Mounting TypeSurface Mount
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Vgs(th) (Max) @ Id1V @ 250μA
QualificationAEC-Q101
PackagingCut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Drain to Source Voltage (Vdss)60 V
Supplier Device PackageSOT-23-3 (TO-236)
Power Dissipation (Max)3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
Vgs (Max)±8V
GradeAutomotive
Operating temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs240mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 4.5 V
FET Feature-
TechnologyMOSFET (Metal Oxide)

Supplier List

Product CodeManufacturer PartManufacturer DescriptionAvailable QtyLead time (days)Sales ConditionPrice (KRW) Order QuantityOrder / Quote
SQ2364EES-T1_GE3
VISHAY
AEC-Q N-CHANNEL 60 V (D-S)175C MOSFET
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
1~ ₩0
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY
N-CH 60V 2A 190mOhm at 4,5V
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
1~ ₩0
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY SILICONIX
SQ2364EES-T1_GE3 N-Channel MOSFET, 2 A, 60 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
1~ ₩0
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
SILICONIX (VISHAY)
SILICONIX (VISHAY)
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
1~ ₩0
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY
AEC-Q N-CHANNEL 60 V (D-S)175C MOSFET
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
1~ ₩0
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
SILICONIX (VISHAY)
SILICONIX (VISHAY)
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
3000~ ₩276
6000~ ₩276
9000~ ₩276
12000~ ₩276
15000~ ₩276
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY SILICONIX
MOSFET N-CH 60V 2A SOT23-3
21000 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
21000 : 1 days

Last Update: 2025-07-21
3000~ ₩311
6000~ ₩295
9000~ ₩274
30000~ ₩268
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
SILICONIX (VISHAY)
Automotive N-Channel 60V RDSON 0.245 MOSFET SOT-23
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
3000~ ₩406
6000~ ₩406
9000~ ₩406
12000~ ₩406
15000~ ₩406
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY SILICONIX
SQ2364EES-T1_GE3 N-Channel MOSFET, 2 A, 60 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix
0 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days

Last Update: 2025-07-21
3000~ ₩491
6000~ ₩477
12000~ ₩459
   
Minimum: 1
Multiple: 1
SQ2364EES-T1_GE3
VISHAY
AEC-Q N-CHANNEL 60 V (D-S)175C MOSFET
1832 RealTime update
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
0 : 1 days
1832 : 1 days

Last Update: 2025-07-21
152~ ₩560
200~ ₩560
500~ ₩440
1000~ ₩400
   
Minimum: 1
Multiple: 1

Full Description

  • AEC-Q N-CHANNEL 60 V (D-S)175C MOSFET
  • Transistor Polarity:N Channel
  • Continuous Drain Current Id:2A
  • Drain Source Voltage Vds:60V
  • On Resistance Rds(on):0.19ohm
  • Rds(on) Test Voltage Vgs:4.5V
  • Threshold Voltage Vgs:600mV
  • Power Dissipation Pd:3W
  • Transi