Name: SQD40061EL_GE3
Availability: InStock

Product Information
	Manufacturer part number: SQD40061EL_GE3 Manufacturer: SIMENS Technical Data:

Products specifications
Width	2.38
Maximum Power Dissipation	107 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	2.5
Length	6.73
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Series	TrenchFET
Height	6.22
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	185 nC @ 10 V
Maximum Drain Source Resistance	9 mΩ
Forward Diode Voltage	1.5
Minimum Gate Threshold Voltage	1.5
Channel Type	P
Maximum Continuous Drain Current	100 A
Package Type	DPAK (TO-252)
Channel Mode	Enhancement
Pin Count	3
Maximum Drain Source Voltage	40 V

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Product Code	Manufacturer Part	Manufacturer	Description	Available Qty	Lead time (days)	Sales Condition	Price (KRW)	Order Quantity	Order / Quote
13978268	SQD40061EL_GE3	VISHAY	P-CH 40V 100A 4,2mOhm TO-252	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13979428	SQD40061EL_GE3	VISHAY SILICONIX	SQD40061EL_GE3 P-Channel MOSFET, 100 A, 40 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩0	Minimum: 1 Multiple: 1
13993756	SQD40061EL_GE3	Vishay Intertechnologies	MOSFET -40V Vds 20V Vgs DPAK (TO-252)	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
13993757	SQD40061EL_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
13999330	SQD40061EL_GE3	VISHAY		0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Pure	1~ ₩0	Minimum: 1 Multiple: 1
14012285	SQD40061EL_GE3	VISHAY SILICONIX	MOSFET P-CH 40V 100A TO252AA	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Parcel Pro	2000~ ₩980	Minimum: 1 Multiple: 1
14012584	SQD40061EL_GE3	VISHAY SILICONIX	SQD40061EL_GE3 P-Channel MOSFET, 100 A, 40 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	2000~ ₩1,236 10000~ ₩1,112	Minimum: 1 Multiple: 1
14012766	SQD40061EL_GE3	SILICONIX (VISHAY)	SILICONIX (VISHAY)	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	2000~ ₩1,132 4000~ ₩1,122 6000~ ₩1,112	Minimum: 1 Multiple: 1
14014783	SQD40061EL_GE3	VISHAY	MOSFET, P-CH, -40V, -100A, 175DEG C	7565 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 7565 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21	1~ ₩1,862 10~ ₩1,533 100~ ₩1,191 500~ ₩1,173	Minimum: 1 Multiple: 1
14015240	SQD40061EL_GE3	VISHAY SILICONIX	MOSFET P-CH 40V 100A TO252AA	0 RealTime update	0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days 0 : 1 days	Last Update: 2025-07-21 Packaging: Cartons	1~ ₩2,315 10~ ₩2,065 100~ ₩1,610 500~ ₩1,330 1000~ ₩1,050	Minimum: 1 Multiple: 1

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MOSFET, P-CH, -40V, -100A, 175DEG C Transistor Polarity:P Channel Continuous Drain Current Id:-100A Drain Source Voltage Vds:-40V On Resistance Rds(on):0.0042ohm Rds(on) Test Voltage Vgs:-10V Threshold Voltage Vgs:-2V Power Dissipation Pd:107W Tra

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